Enhanced resistive switching properties of HfAlOx/ZrO2- based RRAM devices |
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Institution: | 1. School of Material Science and Engineering, Pusan National University, 2 Busandaehak-ro 63 Beon-gil, Guemjeong-gu, Busan, 46241, Republic of Korea;2. Department of Physics and Oxide Research Centre, Memory and Catalyst Research Center, Hankuk University of Foreign Studies, Yongin, 17035, South Korea;3. Materials Center Leoben Forschung GmbH, Roseggerstrasse 12, Leoben, 8700, Austria;4. Department of Physics, United Arab Emirates University, AI Ain, 15551, United Arab Emirates;5. Department of Polymer Science and Engineering, Department of IT-Energy Convergence (BK21 FOUR), Chemical Industry Institute, Korea National University of Transportation, Chungju, 27469, Republic of Korea |
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Abstract: | Resistive Random-Access Memory (RRAM) devices are recognized as potential candidates for next-generation memory devices, due to their smallest cell size, high write/erase speed, and endurance. Particularly, the resistive switching (RS) characteristics in oxide materials have offered new opportunities for developing CMOS-compatible high-density RRAM devices. In this study, the RS behavior of HfAlOx/ZrO2 thin films sandwiched structure between TiN bottom electrode and Au top electrodes were investigated. It was found that Au/HfAlOx/ZrO2/TiN stacks were superior in terms of RS performance when compare to Au/HfAlOx/TiN memory stacks. The devices demonstrated a good resistance ratio of high resistance state and low resistance state ~103 for Au/HfAlOx/TiN and ~105 for Au/HfAlOx/ZrO2/TiN stacks, respectively. Both stacks showed good retention characteristics (>104 ?s) and endurance (>103 cycles). The experimental current-voltage characteristics fitted with different conducting mechanisms, the linear lower bias region is dominated by ohmic conductivity, whereas the non-linear higher bias region was dominated by space-charge limited current conduction mechanism. |
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Keywords: | Nonvolatile memory RRAM Resistive switching mechanism Atomic layer deposition Current conduction mechanism |
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