用离子化技术制备C-BN薄膜

立方晶系的氮化硼(C-BN)具有极好的硬度、绝缘性,近年来受到国内外的注目。本文介绍在10~(-1)Pa的氮气氛中,用电子束蒸发硼,再进行离子化,制得氮化硼薄膜。经电子显微镜衍射图分析及与块状材料相比,其晶格距离极为一致,本文还分析了薄膜形成过程中基板温度、真空度等的影响。

C-BN Films Obtained by Ionized Deposition

Cubic boron nitride (c-BN) films have been developed by ionized deposition from evaporated boron and nitrogen gas at a pressure of 10~(-1) Pa. The film structures were examined by transmission electron microscopy and electron diffraction. It was found that the structure of BN films could be divided into the following categories amorphous, hexagonal, cubic, and their mixtures. The average grain size of c-BN films was estimated to be less than few thousand angstroms. These stuctures and grain sizes depended mainly on the deposition conditions such as substrate potential, temperature, and ion current density.