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离子注入聚合物介质损耗机理的研究
引用本文:吴洪才 屠德民. 离子注入聚合物介质损耗机理的研究[J]. 西安交通大学学报, 1990, 24(4): 135-144
作者姓名:吴洪才 屠德民
作者单位:西安交通大学电子工程系,西安交通大学电气工程系,西安交通大学电气工程系,西安交通大学电气工程系
摘    要:本文进一步讨论离子注入聚合物具有巨大的介质松弛损耗的形成机理和理论公式.作者首先评论了离子注入聚合物可能形成的损耗机理,在否定现有损耗模型的基础上,根椐霍尔效应对导电载流子的鉴别、介质损耗松弛时间温度关系与电导温度关系的一致性,以及隧道效应作用下,电子运劝具有一定速度的概念.推断介质损耗的形成在于隧道效应作用下,导电粒子之间电子的迁移.按照电子迁移形成极化性概念,考虑到电场作用下电子隧道穿透率的差异,建立极化强度的静态和动态方程,导出离子注入聚合物介质松弛损耗的公式。理论分析得到了实验结果的验证.

关 键 词:离子注入 聚合物 介质损耗

STUDY ON MECHANISM OF DIELECTRIC LOSS OF ION-IMPLANTATED POLYMERS
Wu Hongcai. STUDY ON MECHANISM OF DIELECTRIC LOSS OF ION-IMPLANTATED POLYMERS[J]. Journal of Xi'an Jiaotong University, 1990, 24(4): 135-144
Authors:Wu Hongcai
Affiliation:Wu Hongcai (Department of Electronic Engineering) Tu Demin Xi Baofeng Liu Xuezhong (Department of Electrical Engineering)
Abstract:Based on the fact that an enormous dielectric relaxation loss is dissipated in ion-implantated polymers under AC field,the mechanism and theoretical for-mulae of this phenomenon are investigated further in this paper.On the basis of the discrimination of carriers with Hall effect,the consisten-cy of the relaxational time of dielectric loss and conduction against temperature and the idea of electron migration with velocity under tunnelling effect,it isconcluded that the dielectric loss is caused by migration of electrons between the conductive granule due to tunnelling effect.The static and dynamic equations of polarization are derived based on the conception of polarization by migration of electrons and the fact of the difference of the tunnelling probability of ele-ctrons under the electrical field.Then the equations of dielectric loss of ion-implantated polymers are deduced.The theoretical analysis is proved by the experimental results.
Keywords:Ion implantation  polymers  Dielectric loss  
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