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磁控溅射TiN薄膜工艺参数对显微硬度的影响
引用本文:徐哲,席慧智,阮霞. 磁控溅射TiN薄膜工艺参数对显微硬度的影响[J]. 应用科技, 2007, 34(5): 1-3,15
作者姓名:徐哲  席慧智  阮霞
作者单位:哈尔滨工程大学,材料科学与化学工程学院,黑龙江,哈尔滨,150001
摘    要:测试了各种工艺参数下磁控溅射制备TiN薄膜的显微硬度,并研究了TiN薄膜硬度随偏压、N2流量及溅射功率的变化.实验结果表明:N2流量对薄膜性能和结构影响较大,随着N2流量的增加,氮化钛薄膜的硬度先急剧上升,到15mL/s时达到最大值,然后氮化钛薄膜硬度平缓下降,在无偏压的情况下,氮化钛薄膜的硬度很低,加偏压后,由于离子轰击作用,薄膜硬度增加,但过高的负偏压反而会降低氮化钛薄膜硬度.

关 键 词:TiN薄膜  磁控溅射  显微硬度
文章编号:1009-671X(2007)05-0001-04
收稿时间:2006-10-19
修稿时间:2006-10-19

The influence of magnetron sputtering TiN films processing parameters on microhardness
XU Zhe,XI Hui-zhi,RUAN Xia. The influence of magnetron sputtering TiN films processing parameters on microhardness[J]. Applied Science and Technology, 2007, 34(5): 1-3,15
Authors:XU Zhe  XI Hui-zhi  RUAN Xia
Abstract:The microhardness of TiN films, which are prepared by magnetron sputtering with various parameters, is measured. The relationship between the microhardness and processing parameters such as bias voltage, N2 flow, sputtering power, are also investigated. The research results show that the N2flow has significant influence on the structure and properties of the films. With the increase of N2flow, the hardness of TiN film increases dramatically, reaching the maximum of 15 mL/s. Then, the hardness of TiN films gently drops. The TiN films have low hardness without bias voltage. The film hardness increases because of ion bombardment after the bias voltage becomes larger, but the excessive bias negative voltage also will reduce the micro hardness of TiN films.
Keywords:TiN films    magnetron sputtering   microhardness
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