混合物理化学气相沉积法制备Mg衬底MgB2薄膜

用混合物理化学气相沉积（Hybrid physical-chemical vapor deposition 简称为 HPCVD）法在Mg衬底上原位制备出MgB₂超导薄膜样品。超导起始转变温度T_c(onset)＝39.5K，SEM(Scanning Electron Microscopy)图显示晶型结构为六方形，晶粒生长较为致密。样品的X射线衍射分析表明，MgB₂薄膜是多晶的，没有择优方向。晶粒大小约为400nm～1μm。结果表明HPCVD技术在Mg表面直接沉积MgB₂薄膜是可行的，对Mg原料的节约和MgB₂线材的制备具有一定优势。

Growth of MgB2 Thin Film Fabricated on Mg Substrate by Hybrid Physical-Chemical Vapor Deposition

Superconducting MgB₂ thin films were fabricated on Mg substrate by using the hybrid physical-chemical vapor deposition (HPCVD) technique. The film has a T_c(onset)＝39.5K. The SEM images demonstrate that crystallite is compact. X-ray diffraction pattern indicates the film is polycrystalline with no preferring growing direction. The grain size is about 400nm-1.0μm. These results show that it is feasible to deposit MgB₂ thin films directly on Mg by HPCVD technique. It is advantaged to fabricate MgB₂ fibers directly on SiC carrier and MgB₂ superconductive wires.