| 微波等离子体CVD方法制备金刚石薄膜 |
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| 引用本文： | 顾长志,金曾孙,吕宪义,邹广田,高谷松文,坂本幸弘. 微波等离子体CVD方法制备金刚石薄膜[J]. 吉林大学学报(理学版), 1997, 0(3) |
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| 作者姓名： | 顾长志 金曾孙 吕宪义 邹广田 高谷松文 坂本幸弘 |
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| 作者单位： | 吉林大学超硬材料国家重点实验室!长春，130023(顾长志，金曾孙，吕宪义，邹广田)，日本千叶工业大学!日本国千叶县津田沼，275(高谷松文)，日本千叶工业大学!日本国千叶县津田沼，2(坂本幸弘) |
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| 摘 要： | 采用微波等离子体化学气相沉积方法分别在CH4／H2，CO／H2和（CH4＋CO）／H2气体体系下合成了金刚石薄膜．结果表明，所合成的金刚石薄膜具有明显的柱状生长特性和较高的品质，（CH4＋CO）／H2体系合成的金刚石薄膜具有较高的生长速率和（100）晶面定向生长的特性．
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| 关 键 词： | 金刚石薄膜 微波等离子体化学气相沉积方法 生长特性 |
The Preparation of Diamond Films Deposited Using Microwave Plasma CVD Method |
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| Gu Changzhi, Jin Zengsun, Lu Xianyi, Zou Guangtian. The Preparation of Diamond Films Deposited Using Microwave Plasma CVD Method[J]. Journal of Jilin University: Sci Ed, 1997, 0(3) |
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| Authors: | Gu Changzhi Jin Zengsun Lu Xianyi Zou Guangtian |
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| Abstract: | The present paper covers the polycrystalline diamond films deposited on silicon substrate in each of the gaseous systems of CH4/H2, CO/H2 and (CH4 CO)/H2 with the method of microwave plasma CVD. The growth characteristics of the diamond film were studied. The result showed that the diamond film deposited by MWPCVD showed the structure of column and that the system of (CH4 CO)/H2 is of advantage for the deposition of the diamond film with a higher growth rate, (100)grain orientation and higher quality. |
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| Keywords: | diamond film MWPCVD growth characteristic |
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