液态源掺杂对SnO2薄膜特性影响

在单晶硅片上生长ＳｉＯ２绝缘层，再用蒸发的方法在ＳｉＯ２层上淀积超微粒ＳｎＯ２薄膜．采用液态源扩散方法对ＳｎＯ２薄膜进行掺杂．实验表明，采用此法掺杂可精确控制掺杂浓度，此法工艺简便。可靠，使掺杂和热处理一次完成，掺杂后的薄膜气敏特性得到较大的改善．

The Influence on the Characteristic of SnO_2 Thin-Film by Using Liquid Source Doping

The SnO2 insulation layer is grown on the single crystalline silicon wafer,then the ultra-fineness particle SnO2 thin-film is deposited by the method of vacuum evaporation on the SiO2 layer.The SnO2 layer is doped by the liquid sources such as POCl3,B(CH3CH2CH2O3),etc. The experiment result indicated that the doping concentration is accurately controlled by the method of liquid source doping. The technology of the method is simple and reliable. Doping and heat-treatment can be completed at the same time with the method. The gas sensitivity characteristic of thefilm is much improved after doping.