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NiO-TiO_2纳米复合薄膜的阻变特性
引用本文:李建昌,李润霞,郑辰平.NiO-TiO_2纳米复合薄膜的阻变特性[J].东北大学学报(自然科学版),2016,37(5):688-691.
作者姓名:李建昌  李润霞  郑辰平
作者单位:(东北大学 机械工程与自动化学院, 辽宁 沈阳110819)
基金项目:中央高校基本科研业务费专项资金资助项目(N110403001).
摘    要:利用溶胶凝胶法制备了不同n(Ni)/n(Ti)比的Ni O-TiO_2复合薄膜,电学测试表明薄膜具有可重复双极阻变特性,且开关比与Ni O薄膜相比有显著提升.400℃退火n(Ni)/n(Ti)为7∶1的样品阻变阈值电压低、开关比高且稳定性好,原因是Ni O-TiO_2薄膜可形成P-N结纳米结构.焦耳热分析表明薄膜荷电输运属于热激发,高阻态符合由氧空位缺陷俘获电荷所致空间电荷限制导电机制,低阻态为欧姆特性,阻变机理为电荷俘获及再释放.

关 键 词:溶胶凝胶法  金属氧化物复合薄膜  阻变特性  氧空位  

Resistance Switching of NiO-TiO2 Nano-Composite Thin Films
LI Jian-chang,LI Run-xia,ZHENG Chen-ping.Resistance Switching of NiO-TiO2 Nano-Composite Thin Films[J].Journal of Northeastern University(Natural Science),2016,37(5):688-691.
Authors:LI Jian-chang  LI Run-xia  ZHENG Chen-ping
Institution:School of Mechanical Engineering & Automation, Northeastern University, Shenyang 110819, China.
Abstract:The NiO-TiO2 (NTO) nanocomposite thin films with different n(Ni)/n(Ti) ratios were fabricated through sol-gel method. The current-voltage measurements indicated that the NTO films exhibit bipolar resistance switching behavior with low threshold voltage, high on/off ratio and long retention time. The low resistance state was governed by the Ohmic mechanism, while the high resistance state can be described with the oxygen-vacancy-related space charge limited conduction. The switching mechanism is related to the charge trapping/detrapping process.
Keywords:sol-gel method  metal-oxide composite thin film  resistance switching  oxygen vacancy  
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