| 双源法制备CuInSe2多晶薄膜的研究 |
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| 引用本文： | 周炳卿,李蓉萍,赵凤岐.双源法制备CuInSe2多晶薄膜的研究[J].内蒙古师范大学学报(自然科学版),1999,28(4):277-281. |
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| 作者姓名： | 周炳卿 李蓉萍 赵凤岐 |
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| 作者单位： | 内蒙古教育学院物理系(周炳卿)，内蒙古大学物理系(李蓉萍)，内蒙古师范大学物理系!内蒙古呼和浩特010010(赵凤岐) |
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| 摘 要： | 利用氮气作保护气体，用元素合成法进行开管烧结，合成具有单一相黄铜矿结构的ＣｕＩｎＳｅ２ 多晶材料．用真空双源蒸发方法，通过精确控制ＣｕＩｎＳｅ２ 源和Ｃｕ 源或Ｓｅ 源的温度和蒸发速率以及衬底温度，制备ＣｕＩｎＳｅ２ 多晶薄膜，并对ＣｕＩｎＳｅ２ 多晶薄膜的组份、结构、工艺条件及电学性质进行了分析、研究
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| 关 键 词： | 双源法 多晶薄膜 |
STUDIES OF PREPARATION AND CHARACTERIZATION OF CuInSe2 POLYCRYSTALLINE THIN FILMS BY THE DOUBLE-SOURCE METHOD |
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| ZHOU Bing-qing,LI Rong-ping,ZHAO Feng-qi.STUDIES OF PREPARATION AND CHARACTERIZATION OF CuInSe2 POLYCRYSTALLINE THIN FILMS BY THE DOUBLE-SOURCE METHOD[J].Journal of Inner Mongolia Normal University(Natural Science Edition),1999,28(4):277-281. |
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| Authors: | ZHOU Bing-qing LI Rong-ping ZHAO Feng-qi |
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| Abstract: | The CuInSe 2 polycrystalline materials of the single phase composition were synthesized by the direct elemental combination method sintering in an open quartz tube in N 2 ambient.The CuInSe 2 polycrystalline films are made by the double-source method in evaporating,procedure of CuInSe 2 source and Cu source or Se source,the evaporation rates and the substrate temperature were controlled accurately by the microcomputer system.The relations between composition,structure,technology condition and electrical properties of the CuInSe 2 polycrystalline film were analysed and studied. |
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| Keywords: | CuInSe2 |
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