| SiC冶炼炉温度场的有限元分析及其ANSYS模拟研究 |
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| 引用本文： | 王晓刚,刘永胜,李晓池,郭晓滨,李强. SiC冶炼炉温度场的有限元分析及其ANSYS模拟研究[J]. 西安科技大学学报, 2002, 22(3): 272-276 |
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| 作者姓名： | 王晓刚 刘永胜 李晓池 郭晓滨 李强 |
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| 作者单位： | 西安科技学院,材料工程系,陕西,西安,710054 |
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| 基金项目： | 国家自然科学基金项目 (5 0 1740 46) |
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| 摘 要： | 采用有限元分析方法对Acheson炉内温度场进行研究 ,进而采用ANSYS数值模拟软件对冶炼炉内温度分布进行模拟 ,得到了冶炼炉内温度分布的模拟图 ,分析了炉内的温度分布规律及其对SiC的生成和产率的影响 ,并提出了扩大SiC生成温度区域的措施
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| 关 键 词： | SiC 温度场 有限元 ANSYS |
| 文章编号： | 1671-1912(2002)03-0272-05 |
| 修稿时间： | 2001-11-19 |
Finite element analysis and ANSYS simulation study for the temperature field of silicon carbide smelting furnace |
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| WANG Xiao gang,LIU Yong sheng,LI Xiao chi,GUO Xiao bin,LI Qiang. Finite element analysis and ANSYS simulation study for the temperature field of silicon carbide smelting furnace[J]. JOurnal of XI’an University of Science and Technology, 2002, 22(3): 272-276 |
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| Authors: | WANG Xiao gang LIU Yong sheng LI Xiao chi GUO Xiao bin LI Qiang |
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| Abstract: | Temperature field of Acheason furnace was studied using finite element analysis, and ANSYS numerical simulation software was used to simulate temperature distribution of SiC synthesizing furnace. The simulated diagram of temperature distribution was achieved. The laws of temperature distribution in the synthesizing furnace were studied, and the specific methods to enlarge the temperature field of silicon carbide synthesis were supplied. |
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| Keywords: | SiC temperature field finite element ANSYS |
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