| 单晶体外延膜四方畸变随深度变化的测试 |
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| 引用本文： | 丁斌峰,郑卫东.单晶体外延膜四方畸变随深度变化的测试[J].河北师范大学学报(自然科学版),2012,36(2):140-143. |
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| 作者姓名： | 丁斌峰 郑卫东 |
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| 作者单位： | 1. 北京大学核物理与核技术国家重点实验室,北京100871;廊坊师范学院物理与电子信息学院,河北廊坊065000
2. 廊坊师范学院物理与电子信息学院,河北廊坊,065000 |
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| 基金项目： | 国家自然科学基金(50802041,50872050);国家重点基础研究发展计划(973)(2011CB832923);廊坊师范学院重点项目(LSZZ201101) |
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| 摘 要： | 采用卢瑟福背散射/沟道(RBS/C)实验,对有AlN插入层的GaN/Si样品进行了测试.通过测试分析计算表明:1)薄膜晶体的结晶品质良好,其最小产额χmin=2.5%;2)通过对RBS/C随机谱的模拟,得出样品结构为550 nm-GaN/20 nm-AlN/425 nm-GaN/Si;3)通过对GaN外延膜对称轴0001]与非对称轴1213]的角扫描,得出样品在120 nm处的四方畸变,为0.179%,表明GaN外延模的弹性应变在AlN缓冲层的作用下得到释放,避免了外延膜的碎裂,提高了GaN外延膜的结晶品质.
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| 关 键 词： | 卢瑟福背散射/沟道 最小产额 弹性应变 四方畸变 |
The Measurement of Single Lattice Epilayer Tetragonal Distortion Changed with Depths |
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| DING Binfeng
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ZHENG Weidong.The Measurement of Single Lattice Epilayer Tetragonal Distortion Changed with Depths[J].Journal of Hebei Normal University,2012,36(2):140-143. |
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| Authors: | DING Binfeng ZHENG Weidong |
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| Institution: | 1(1.State Key Laboratory of Nuclear Physics and Technology,Beijing University,Beijing 100871,China;2.Department of Physics and Electronic Information,Langfang Teachers College,Hebei Langfang 065000,China) |
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| Abstract: | The structure of GaN/Si with AlN interlayer is tested by Rutherford backscatter/channel(RBS/C) experiment.The experiment shows that GaN epilayer has high crystal quality,the minimum yields of the crystal is χmin=2.5 %.The selected sample structure is 550 nm-GaN/20 nm-AlN/425 nm-GaN/Si by simulating RBS/C random spectra.Through angular scans of the symmetry axis and asymmetry axis ,it can be calculated out the tetragonal distortion eT=0.179 % in 120nm depths.The elastic strain of GaN epilayer by AlN buffer layer is released,this can avoid epilayer cracks,and effectively increase the GaN crystalline quality. |
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| Keywords: | Rutherford backscatter/channel the minimum yields elastic strain tetragonal distortion |
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