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| 硅中高浓度注入的硼砷离子在热氧化中的再分布 | |
| 引用本文： | 汤庭鳌,C.A.Paz de Araujo. 硅中高浓度注入的硼砷离子在热氧化中的再分布[J]. 复旦学报(自然科学版), 1988, 0(3) |
| 作者姓名： | 汤庭鳌 C.A.Paz de Araujo |
| 作者单位： | 复旦大学电子工程系，Dept.of E. E.，UCCS |
| 摘 要： | 本文利用杂质在氧化气氛中的有效扩散系数,通过解扩散方程,首次得到了硅中高浓度注入硼和砷离子在热氧化气氛中再分布的解析表达式。结果表明,在热氧化气氛中杂质再分布的结深与时间之间的三分之一次方关系多了一个修正项。 |
| 关 键 词： | 扩散系数 离子注入 退火 热氧化。 |
REDISTRIBUTION OF HIGH CONCENTRATION IMPLANTED B~+ AND As~+ IN SILICON DURING THERMAL OXIDATION |
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| Tang Ting''''ao,. REDISTRIBUTION OF HIGH CONCENTRATION IMPLANTED B~+ AND As~+ IN SILICON DURING THERMAL OXIDATION[J]. Journal of Fudan University(Natural Science), 1988, 0(3) | |
| Authors: | Tang Ting''''ao |
| Abstract: | With the use of the effective diffusion coefficient of impurities under oxidationatmosphere and by solving the diffusion equation, the analytical redistribution expres-sion of high concentration implanted Boron and Arsenic ions in silicon during thermaloxidation has been obtained for the first time. The result indicates that the junctiondepth of impurities redistribution during thermal oxidation has the modified one thirdpower relation with time. |
| Keywords: | diffusion coefficients ion implatation annealing thermal oxidation. |
| 本文献已被 CNKI 等数据库收录！ | |