| Ga_（1－x）In_xAs／GaInAsP／InP张应变层量子阱的增益特性 |
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| 引用本文： | 黄翊东,荒井滋久,彭江得,周炳琨.Ga_（1－x）In_xAs／GaInAsP／InP张应变层量子阱的增益特性[J].清华大学学报(自然科学版),1996(9). |
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| 作者姓名： | 黄翊东 荒井滋久 彭江得 周炳琨 |
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| 作者单位： | 清华大学电子工程系，东京工业大学物理电子学系 |
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| 摘 要： | 在运用变形计算法计算了Ｇａ１－ｘＩｎｘＡｓ／ＧａＩｎＡｓＰ／ＩｎＰ应变量子阱子能带结构的基础上，综合考虑了子能带耦合效应对价带子能带与跃迁矩阵元的作用及状态密度对增益线宽的影响，首次从理论上发现张应变量子阱中的ＴＭ模具有比压应变或无应变量子阱中的主模式ＴＥ模更为优异的增益特性。即增益系数更大，微分增益更高，线宽更窄。
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| 关 键 词： | 张应变 量子阱 增益特性 |
Gain Characteristics of Ga_(1-x)In_xAs/GaInAsP/InP tensile-strained quantumwell |
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| Huang Yidong, Shigehisa Arai, Peng Jiangde, Zhou Bingkun.Gain Characteristics of Ga_(1-x)In_xAs/GaInAsP/InP tensile-strained quantumwell[J].Journal of Tsinghua University(Science and Technology),1996(9). |
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| Authors: | Huang Yidong Shigehisa Arai Peng Jiangde Zhou Bingkun |
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| Abstract: | A new theoretical explanation for the gain characteristics of the tensile-strainedquantum well (QW) is advanced from the density-matrix theory taking into account the effects of subband-mixing on both the valance subband structures and the transition dipole moments for the first time. It is found that the TM-mode in the tensile-strained QW has higherlinear gain coefficient, higher differential gain and narrower line width than that of the TEmode in both the compressively strained and the unstrained QWs. |
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| Keywords: | tensile-strained quantum well (QW) gain characteristic |
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