| PECVD法制备SiOxNy膜中组份对电学特性的影响 |
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| 引用本文： | 王川,陈蒲生.PECVD法制备SiOxNy膜中组份对电学特性的影响[J].华南理工大学学报(自然科学版),1995,23(12):95-98. |
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| 作者姓名： | 王川 陈蒲生 |
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| 作者单位： | 华南理工大学应用物理系 |
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| 摘 要： | 研究了等离子体增强化学气相淀积法制备ＳｉＯｘＮｙ膜工艺中混合气体配双与薄膜中氮、氧含量间的变化关系以及对膜层折射率、介电常数的影响。同时，对研制成的薄膜的ＭＩＳ结构进行了电学测试，探讨了膜层中氮、氧含量变化对薄膜电学特性的影响。
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| 关 键 词： | 介质膜 电学性质 半导体 PECVD法 氮氧化硅 薄膜 |
A STUDY ON COMPOSITIONS OF NITROGEN-RICH SiO_xN_y GATE DIELECTRIC FILM FABRICATED BY LOW TEMPERATURE PECVD METHOD AND ITS ELECTRICAL CHARACTERISTICS |
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| Wang Chuan, Chen Pusheng, Wang Feng.A STUDY ON COMPOSITIONS OF NITROGEN-RICH SiO_xN_y GATE DIELECTRIC FILM FABRICATED BY LOW TEMPERATURE PECVD METHOD AND ITS ELECTRICAL CHARACTERISTICS[J].Journal of South China University of Technology(Natural Science Edition),1995,23(12):95-98. |
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| Authors: | Wang Chuan Chen Pusheng Wang Feng |
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| Abstract: | The relationship between the reactant mixture gas used to produce SiOxNy film by PECVD method and the composition, refractive index and electric inductivity of the film is investigated. Furthermore, MIS structure is fabricated and tested by high-frequency C-V and quasi-static C-V measurement, in order to study how the electrical characteristics (the fixed charge density, interface state density and flatband voltage shift) of the MIS structure influenced by the composition of the SiOxNy film. |
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| Keywords: | plasma enhanced chemical vapour deposition (PECVD ) dielectric film electrical characteristic reactant mixture gas composition of the film |
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