GaN基激光器的研究进展

GaN材料作为第三代半导体材料具有十分独特的性能，其发光波段可以覆盖从红外到深紫外波段。GaN材料击穿电场强、发光效率高，使其在显示、照明、通信等领域具有非常广泛的应用。综述了GaN基激光器的发展历程及其失效和退化机制的研究进展。目前最新的蓝光GaN基激光器在3 A电流连续工作时的电压和输出功率为4.03 V和5.25 W；最新的绿光激光器波长为532 nm，在电流1.6 A时，输出功率为1.19 W。进一步阐述了GaN基激光器退化的主要表现，即随着工作时间的延长，激光器发光效率降低、光转化效率降低以及电压升高。总结了四种主要的退化模式，分别为封装退化、静电损伤、腔面退化和芯片失效。

Research Progress of GaN-based Laser Diodes

As the third generation semiconductors, GaN-based materials have very unique properties, and their emission wavelengths can cover from infrared to deep ultraviolet. GaN-based materials are widely used in display, lighting, communication and other fields due to their strong breakdown of electric field and high luminous efficiency. The development of GaN-based lasers and their failure and degradation mechanisms are reviewed. At present, the voltage and output power of the latest blue-light GaN-based laser are 4.03 V and 5.25 W at current of 3 A. The latest green laser has a wavelength of 532 nm and an output power of 1.19 W at a current of 1.6 A. The main performance of GaN-based laser degradation is described, that is, with the increase of working time, the luminous efficiency decrease, the conversion efficiency decreases and the voltage increases. Four main degradation models are summarized,which are package degradation, electrostatic damage, cavity surface degradation and chip failure.