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Progress in material removal mechanisms of surface polishing with ultra precision
作者姓名:XUJin  LUOJianbin  LUXinchun  ZHANGChaohui  PANGuoshun
作者单位:[ogy,TsinghuaUniversity,Beijing100084,China
摘    要:Chemical mechanical polishing (CMP) process is commonly regarded as the best method for achieving global planarization in the field of surface finishing with ultra-precision. The development of investigation on material removal mechanisms for different materials used in computer hard disk and ultra-large scale integration fabrication are reviewed here. The mechanisms underlying the interaction between the abrasive particles and polished surfaces during CMP are addressed, and some ways to investigate the polishing mechanisms are presented.

关 键 词:化学机械抛光  CMP  物质迁移机理  磨损  ULSL  计算机硬盘
收稿时间:2004-02-23
修稿时间:2004-06-28

Progress in material removal mechanisms of surface polishing with ultra precision
XUJin LUOJianbin LUXinchun ZHANGChaohui PANGuoshun.Progress in material removal mechanisms of surface polishing with ultra precision[J].Chinese Science Bulletin,2004,49(16):1687-1693.
Authors:Email author" target="_blank">Jin?XuEmail author  Jianbin?Luo  Xinchun?Lu  Chaohui?Zhang  Guoshun?Pan
Institution:XU Jin, LUO Jianbin, LU Xinchun, ZHANG Chaohui & PAN Guoshun State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China
Abstract:Chemical mechanical polishing (CMP) process is commonly regarded as the best method for achieving global planarization in the field of surface finishing with ultra-precision. The development of investigation on material removal mechanisms for different materials used in com-puter hard disk and ultra-large scale integration fabrication are reviewed here. The mechanisms underlying the interac-tion between the abrasive particles and polished surfaces during CMP are addressed, and some ways to investigate the polishing mechanisms are presented.
Keywords:CMP  material removal mechanism  wear  ULSI  com-puter hard disk    
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