| 基于可控Cd掺杂In2O3纳米线的电学特性研究 |
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| 引用本文： | 郭慧尔,葛焱,王春来,李琳珑,于永强.基于可控Cd掺杂In2O3纳米线的电学特性研究[J].合肥工业大学学报(自然科学版),2012,35(6):780-783. |
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| 作者姓名： | 郭慧尔 葛焱 王春来 李琳珑 于永强 |
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| 作者单位： | 合肥工业大学电子科学与应用物理学院,安徽合肥,230009 |
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| 基金项目： | 中央高校基本科研业务费专项资金资助项目 |
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| 摘 要： | 文章利用化学气相沉积法合成了不同摩尔比的Cd掺杂的In2O3纳米线,制备了基于单根In2O3纳米线的底栅场效应晶体管,并研究了其电输运特性。结果表明,相对未掺杂的In2O3纳米线,In2O3∶Cd纳米线的电导率有1～2个数量级变化,载流子迁移率高达58.1cm2/(V.s),载流子浓度高达3.7×1018 cm-3。可控Cd掺杂In2O3纳米线将在纳米光电子器件方面有着广泛的应用前景。
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| 关 键 词： | In2O3纳米线 化学气相沉积 Cd掺杂 场效应晶体管 |
Tunable electric properties of Cd-doped In2O3 nanowires |
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| GUO Hui-er
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GE Yan
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WANG Chun-lai
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LI Lin-long
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YU Yong-qiang.Tunable electric properties of Cd-doped In2O3 nanowires[J].Journal of Hefei University of Technology(Natural Science),2012,35(6):780-783. |
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| Authors: | GUO Hui-er GE Yan WANG Chun-lai LI Lin-long YU Yong-qiang |
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| Institution: | (School of Electronic Science and Applied Physics,Hefei University of Technology,Hefei 230009,China) |
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| Abstract: | Cd-doped In2O3 nanowires(NWs) with different molar ratio were accomplished via the method of chemical vapor deposition.Back-gate field-effect transistors(MOSFETs) were constructed based on the single In2O3∶Cd NW.Systematical measurements on the electrical transport properties of the In2O3∶Cd NWs reveal that compared with the non-doped In2O3 NWs,the conductivity of In2O3∶Cd NWs can be tuned one or two orders of magnitude by adjusting the Cd doping level.With the increase of Cd doping level,high ionic mobility up to 58.1 cm2/(V·s) is obtained and the electron concentration can be as high as 3.7×1018 cm-3.It is expected that the Cd-doped In2O3 NWs with controllable electrical transport properties will have important applications in nano-optoelectronic devices. |
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| Keywords: | In2O3 nanowire chemical vapor deposition Cd doping field-effect transistor |
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