多层半导体结构的共振隧穿性质

应用转移矩阵方法，计算了多层半导体结构的电子透射系数，研究了三元准周期超晶格的电子共振隧穿性质，讨论了不同结构对隧穿性质的影响。结果表明：准周期超晶格结构的自相似性导致了电子透射率谱的自相似性；随着代数的增加，高透射率的区域越来越集中于某一小的能量范围；对应不同的排列结构，电子透射率随能量的分布也不相同，透射率较大的能量位置与系统中占多数的那种势阱的能级相对应。

RESONANT TUNNELING OF MULTILAYER SEMICONDUCTOR STRUCTURES

Using the transfer matrix method,we calculate the resonant tunneling transmissivity of the electron in multilayer semiconductor structures,investigate the resonant tunneling of three tile quasiperiodic superlattices,and discuss the effect of different structure on the tunneling character.It is shown that the self similarity in the quasiperiodic superlattice structures results in the self similarity of the resonant tunneling of the electron.As the generation is increased,the transmission peaks are located within a little energy range.For the different arrange of the structural layers,the distribution of the transmissivity varried with the electron energy is different,and the energy positions for the higher transimissivity are related to the energy states in the potential well which constitutes the majority in quasipriodic superalttice systems.