Mn掺杂GaN纳米条的制备和性质的研究

通过在1000℃下氨化锰掺杂Ga2O3薄膜制备了大量GaMnN纳米条。采用此法得到的剑状Mn掺杂GaN纳米条是六方纤锌矿结构,Mn的原子百分比是5.43%,纳米条的厚度大约为100 nm,宽度为200~400nm。X射线衍射(XRD)、扫描电镜(SEM)、透射电子显微镜(TEM)、高分辨透射电子显微镜(HRTEM)、选区电子衍射(SAED)、X射线光电子能谱(XPS)和荧光分光光度计(PL)用于表征所制备纳米条形貌及光学性质。室温下以325 nm波长的光激发样品表面,发现由于Mn的掺杂使GaN的发光峰有较大的红移。最后,简单讨论了GaN纳米条的生长机制。

Fabrication, Morphology and Optical Properties of Mn-Doped GaN Nanobars

We propose a new approach for large-scale manufacture of GaMnN nanobars by ammoniated Mn doped Ga2O3 films at 1000℃. The obtained sword-like Mn-doped GaN nanobars are single-crystal hexagonal structure and the atom percentage of Mn is 5.43%. Their thickness and width are approximately 100 nm and 200 -400 nm. These nanobars are characterized with X-ray diffraction （XRD）, scanning electron microscope （SEM）, X-ray photoelectron spectroscopy （XPS）, high-resolution transmission eleetron microscopy （HRTEM） and photoluminescence （PL）. The GaN nanobars exhibit two emission bands with two well-defined PL peaks at 388 nm and 409 nm. The significant red-shift manifests for the photoluminescence of GaN due to Mn doping. We also briefly discuss the growth mechanism of crystalline GaN nanobars.