阻挡杂质带甚长波红外探测器

阻挡杂质带(Blocked Impurity Band,BIB)探测器是从杂质带光电导(Impurity Band Conduction,IBC)探测器发展而来,利用杂质能级上的电子跃迁,可以探测光子能量远小于半导体禁带宽度的低能光子.BIB探测器的探测波长主要由衬底和掺杂杂质决定,可以覆盖5–300μm波段范围.得益于探测波长长、探测率高和抗辐射性好等优点,BIB探测器自问世以来就一直被大量研究,广泛应用于各种大型天文基红外探测平台上.目前,Si基BIB探测器发展迅速,但是Ge基和GaAs基BIB探测器的发展相对缓慢.BIB探测器对于推动天文和相关科学的发展具有不可替代的作用,欧美等发达国家在BIB探测器上的科研投入巨大.随着我国经济和科技的发展,我国科研人员急切盼望国产BIB探测器可以早日投入使用.本文主要针对BIB探测器物理模型、制备方法、测试手段和国内外发展现状等方面展开讨论,探究BIB探测器的主要工作机制以及器件研发的关键技术,帮助相关研究人员快速了解BIB探测器.

Blocked impurity band very long wavelength infrared detector

Blocked impurity band(BIB)detector is a derivative of the impurity band conduction(IBC)detector.It can detect lowenergy photons whose energy is much smaller than the band gap of the semiconductor through the electronic transition on the impurity band.The detection wavelength of the BIB detector is mainly determined by the substrate and doped impurities which can cover the range of 5–300μm.Owing to the advantages of long detection wavelength,high detection rate and good radiation resistance,BIB detectors have been extensively studied and are widely used in various large-scale astronomical infrared detection platforms.Presently,Si-based BIB detectors are developing rapidly,but the development of Ge-based and GaAs-based BIB detectors is relatively slow.BIB detectors play an irreplaceable role in promoting the development of astronomy and related sciences.Developed countries such as Europe and the United States have invested a lot in scientific research on BIB detectors.With the development of China’s economy and technology,Chinese researchers hope eagerly that the domestic BIB detector can be put into use as soon as possible.Herein,in order to help the related researchers to quickly understand the BIB detector,the device physical model,preparation methods,testing methods and development status have been discussed,and the involved working mechanism and key device technology are also explored.