| 半导体双势垒结构界面光学声子模及其与电子的耦合 |
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| 引用本文： | 阎祖威.半导体双势垒结构界面光学声子模及其与电子的耦合[J].内蒙古大学学报(自然科学版),1999,30(4):463-468. |
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| 作者姓名： | 阎祖威 |
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| 作者单位： | 内蒙古大学固体物理研究室，内蒙古农牧学院基础部 |
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| 基金项目： | 国家自然科学基金,内蒙古自然科学基金 |
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| 摘 要： | 采用宏观连续介质模型研究了极性半导体双势垒结构中界面光学声子模．计算了界面光学声子的色散关系和声子势；给出了电子－界面光学声子相互作用哈密顿量．对ＧａＡｓ／ＡｌＡｓ材料进行了数值计算和讨论
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| 关 键 词： | 双势垒 界面光学声子 电子－声子相互作用 |
Interface Optical Phonons and Their Coupling with Electrons in Double Barrier Structures of Semiconductors |
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| YAN Zu,wei.Interface Optical Phonons and Their Coupling with Electrons in Double Barrier Structures of Semiconductors[J].Acta Scientiarum Naturalium Universitatis Neimongol,1999,30(4):463-468. |
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| Authors: | YAN Zu wei |
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| Institution: | YAN Zu wei 1,2 |
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| Abstract: | The interface optical (IO) phonon modes in double barrier structures of polar semiconductor are studied with the macroscopic dielectric continuum model.The dispersion relations and the phonon potential for interface optical phonon modes are calculated and the Hamiltonian of the electron IO phonon interaction is given.The numerical calculation and discussion for a specific GaAs/AlAs system are presented. |
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| Keywords: | double barrier interface optical phonon electron phonon interaction |
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