| 两种场发射锥尖的制备工艺及电学特性分析 |
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| 引用本文： | 秦明,黄庆安.两种场发射锥尖的制备工艺及电学特性分析[J].东南大学学报(自然科学版),1997,27(6):109-113. |
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| 作者姓名： | 秦明 黄庆安 |
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| 作者单位： | 东南大学微电子中心 |
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| 基金项目： | 国家自然科学基金,国防科技预研基金 |
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| 摘 要： | 研究了倒金字塔填充型锥尖及正向刻蚀硅尖的制备方法，工艺及封装方法等，并分别测试了这两种场发射尖阵列的电子发射特性，分配表明倒金字塔填充型锥尖适用于制备高频器器件，正向刻蚀的硅尖适用于制备高速开关器件。
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| 关 键 词： | 场致发射阴极 键合 高速开关 微电子学 锥尖 |
Fabrication and Electrical Characteristics of Two Kinds of Field Emission Arrays |
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| Qin Ming,Huang Qing''''an,Wei Tongli.Fabrication and Electrical Characteristics of Two Kinds of Field Emission Arrays[J].Journal of Southeast University(Natural Science Edition),1997,27(6):109-113. |
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| Authors: | Qin Ming Huang Qing'an Wei Tongli |
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| Abstract: | The downward pyramid filled cone and upward etched silicon cone are fabricated. Two kinds of packing structures are used and the emission properties of these cones are also tested. The study shows that the downward pyramid filled cone can be used in the high frequency devices and the upward etched silicon cone can be used in the high speed switch devices. |
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| Keywords: | field emission cathodes bonding high frequencies high speed switchs |
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