电离气体组分对高频等离子体温度的影响

电感耦合高频等离子体在高纯材料合成等领域具有重要应用。电离气体组分影响等离子温度,并影响其使用性能。通过改变电离气体中氧气与氮气的配比,以及往空气中掺入不同比例的氩气,研究了电离气体组分对高频等离子体温度的影响。结果表明,电离气体中氧气相对氮气气体比例的增加可显著提高等离子体温度,同时可促进Si与O粒子的结合。在加料前氧气含量从10%增加到90%时,等离子体电子温度从6 282 K增加到了7 047 K;加料后电子温度同样随氧气含量增加而升高;并且游离Si粒子数量随之显著降低;往空气中掺入氩气同样可以提高等离子体电子温度并促进二氧化硅的形成,但其作用弱于氧气。

Effects of Ionization Gas on Temperature of High Frequency Plasma

Inductively coupled high frequency plasma can be use in areas of synthesizing high purity materials due to its advantages. The influence of ionization gas component on electron temperature was investigated by changing proportion of oxygen and nitrogen and mixing argon into air. The results show that increasing proportion of oxygen versus nitrogen can improve electron temperature dramatically and promote combination of Si and O. Electron temperature increased from 6282 K to 7047 K when contents of oxygen increased from 10 % to 90 % without feeding. And mixing of argon into air can also improve electron temperature and benefit the formation of silicon dioxide. But the effect of argon is weaker than oxygen.