高电阻率N型单晶硅的红外光谱

用1R-450S型红外分光光度计测量了不同厚度的高电阻率n型单晶硅的透射光谱。计算出波长在2.5-50μ范围内单晶硅的吸收系数α。分别以湿氧热氧化和干氧热氧化法在硅样品表面上生长一层SiO_2膜。实验表明在2.5-50μ范围内,湿氧热氧化S_1O_2膜有三个红外吸收带。在2.5-6.7μ波段内SiO_2膜具有显著的抗反射作用。

Infrared Spectra of n—type Monocrystal Silicon with High Resistivity

The transmission spectra of n-type monocrystal silicon of different thichness with high resistivity are measured by using a IR-450S-type infrared spectrophotometer. To the range 2.5—50μ. of wavelength the absorption coefficient α of monocrystal Silicon are calculated. SiO_2 films grow on the surfaces of Silicon by taking the methods of wet-oxidation and dryoxidation, respectively. The experiments show that, within the range 2.5 —50μ of wavelengh there are three infrared absorption bands in wet-oxidation SiO_2 films. The SiO_2 films have remarkable effect of antireflection in 2.5—6.7μ.