烘烤温度对LaNiO_3薄膜微结构与电学性能的影响

采用sol-gel技术在单晶Si(100)衬底上制备了LaNiO3导电薄膜.利用X射线粉末衍射、原子力显微镜、扫描电子显微镜和四探针电阻测量法研究了不同烘烤温度对LaNiO3薄膜的晶体结构、表面形貌和导电性能的影响.结果表明,LaNiO3薄膜均为赝立方钙钛矿结构,表面致密、均匀,衬底与薄膜间界面清晰.烘烤温度为210℃时,薄膜具有最好的<110>择优取向性.烘烤温度在210℃的薄膜具有最低的电阻率,达到10-4Ω.cm数量级,导电性能最好.

Effects of Baking Temperature on Microstructures and Electric Properties of LaNiO3 Thin Films

LaNiO3(LNO) thin films were prepared on Si(100) substrates with various baking temperatures from 150 ℃ to 300 ℃ by sol-gel route.Their crystal structure,surface morphologies,and conductive property were experimentally investigated by using X-ray diffraction,atomic force microscopy,scanning electron microscopy,and 4-point probe method.All the LNO films crystallized into a pseudocubic perovskite phase with the dense,uniform and crack-free surfaces.We also found that the baking temperature has obvious influences on the grain orientations and resistivities of the LNO films.The LNO film showed more preferential <110>-orientation at the baking temperature of 210 ℃ than at the other temperatures.The LNO film obtained at the baking temperature of 210 ℃ exhibited the smallest resistivity as low as 8.98×10-4 Ω·cm.