| 高温热退火时异质结薄膜CeO_2/Si界面扩散-反应的机理研究 |
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| 引用本文： | 吴正龙,杨锡震,李强胜,黄大定.高温热退火时异质结薄膜CeO_2/Si界面扩散-反应的机理研究[J].北京师范大学学报(自然科学版),1999(3). |
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| 作者姓名： | 吴正龙 杨锡震 李强胜 黄大定 |
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| 作者单位： | 北京师范大学分析测试中心!100875，北京(吴正龙，杨锡震)，北京师范大学物理学系!100875，北京(李强胜)，中国科学院半导体研究所!100083，北京(黄大定) |
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| 摘 要： | 基于CeO2／Si异质结在氧气氛下高温退火界面存在扩散反应过程，建立了扩散－反应方程，对有关的实测数据进行了计算机拟会，其结果与实验能很好地吻合．不同温度下的拟合结果还表明，异质结界面处O，Ce，Si的扩散系数及Si的氧化反应系数均随温度指数上升，并计算出扩散反应激活能．
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| 关 键 词： | CeO_2／Si异质结构 扩散－反应方程 激活能 |
INVESTIGATION OF THE DIFFUSION-REACTION NEAR INTERFACE OF HETEROSTRUCTURE CeO_2/Si DURING HIGH TEMPERATURE ANNEALING |
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| Wu Zhenglong, Yang Xizhen, Li Qiangsheng, Huang Dading.INVESTIGATION OF THE DIFFUSION-REACTION NEAR INTERFACE OF HETEROSTRUCTURE CeO_2/Si DURING HIGH TEMPERATURE ANNEALING[J].Journal of Beijing Normal University(Natural Science),1999(3). |
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| Authors: | Wu Zhenglong Yang Xizhen Li Qiangsheng Huang Dading |
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| Abstract: | Components, O, Ce and Si, near the CeO2/Si heterostURE interface are obvious ly changed and silicon oxidation appears after CeO2/Si was annealed at high temperature in the oxygen environment. These mean that diffusion-reaction occurs in this annealing process.Based on these, computer simulation is carried out and the results show that the diffusion coefficients of O, Ce and Si, and the reaction coefficient for silicon oxidation increase with the exponentinl function of temperature, and obey thermal activation energy rule. The activation energy of the diffusion and reaction are deduced |
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| Keywords: | CeO_2/Si heterostructure diffusion-reaction equation activation energy |
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