Thermoelectric properties of quaternary Mg2Sn0.4Si0.6−xGex alloys |
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| Authors: | Hao Yin Qian Zhang Tie-Jun Zhu |
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| Institution: | State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China |
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| Abstract: | Quaternary alloys Mg2Sn0.4Si0.6−xGex (x=0, 0.02, 0.05, 0.08 0.1, and 0.2) were prepared using induction melting followed by hot-pressing. Relative densities of the sintered samples were over 97% of the theoretical values. Multiple phases were detected in the samples. It was found that the Seebeck coefficient was sensitive to the content of Mg2Ge and a maximum value of about 350 μ V.K−1 was obtained. The introduction of Ge increases the electrical conductivity and the thermal conductivity simultaneously. The mechanism of this phenomenon was discussed. A maximum dimensionless figure of merit, ZT, of about 0.28 was obtained for Mg2Sn0.4Si0.55Ge0.05 at 550 K. |
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| Keywords: | thermoelectric materials hot-pressing thermal conductivity induction melting quaternary alloys |
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