| SIPOS／Si结构的界面特性 |
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| 引用本文： | 曹广军,徐彦忠.SIPOS／Si结构的界面特性[J].华中科技大学学报(自然科学版),1996(3). |
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| 作者姓名： | 曹广军 徐彦忠 |
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| 作者单位： | 华中理工大学固体电子学系 |
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| 摘 要： | 采用红外吸收光谱分析了ＳＩＰＯＳ薄膜中Ｓｉ—Ｏ键的结构，对比了热退火、快速灯光退火对ＳＩＰＯＳ中Ｓｉ—Ｏ键结构的影响，并结合ＳＩＰＯＳ／Ｓｉ结构的Ｃ－Ｖ，Ｉ－Ｖ测试结果，对其界面特性进行了分析．
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| 关 键 词： | SIPOS／Si结构 界面特性 退火 |
A Study on the Interface Properties of SIPOS/Si Structures |
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| Cao Guangjun,Xu Yanzhong.A Study on the Interface Properties of SIPOS/Si Structures[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1996(3). |
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| Authors: | Cao Guangjun Xu Yanzhong |
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| Abstract: | fter SIPOS films have been prepared, they can be annealed either with direct heat or with flashlight. Based on the infrared absorption spectra of SIPOS films, the properties of Si-O bonding in the films by different modes of annealing are analyzed. In order to examine the interface properties of the SIPOS/Si structures, the C-V and I-V characteristics of the structures are measured. It can be seen that both annealing methods can improve the interface properties and the structure behaves more like a heterojunction. |
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| Keywords: | SIPOS/Si structure interface property annealing |
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