| 硅栅CMOS集成电路测试图形的研究 |
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| 引用本文： | 桂力敏 陈康民. 硅栅CMOS集成电路测试图形的研究[J]. 华东师范大学学报(自然科学版), 1992, 0(1): 53-63 |
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| 作者姓名： | 桂力敏 陈康民 |
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| 作者单位： | 华东师范大学电子科学技术系，华东师范大学电子科学技术系，华东师范大学电子科学技术系，华东师范大学电子科学技术系，华东师范大学电子科学技术系，华东师范大学电子科学技术系，上海元件五厂，上海元件五厂，上海元件五厂 |
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| 摘 要： | 本文介绍了用于硅栅CMOSIC园片级工艺诊断和可靠性监控的微电子测试图形。重点论述了(1)用于检测漏、源及多晶硅薄层电阻和因扩散及腐蚀引起的横向变化量的组合结构,(2)用于监测CMOSIC动态参数的结构设计及其对工艺的评价。
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| 关 键 词： | 硅栅 CMOSIC 测试图形 组合结构 |
Study on Silicon-gate CMOS IC Test Pattern |
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| GUI LIMIN,HE DEHONG,DING RUIJUN,DONG SHENGGIANG,XIE JIAHUI,CHEN CHENG,CHEN KANGMIN,CHEN GUPING,XU SHIMEI. Study on Silicon-gate CMOS IC Test Pattern[J]. Journal of East China Normal University(Natural Science), 1992, 0(1): 53-63 |
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| Authors: | GUI LIMIN HE DEHONG DING RUIJUN DONG SHENGGIANG XIE JIAHUI CHEN CHENG CHEN KANGMIN CHEN GUPING XU SHIMEI |
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| Affiliation: | GUI LIMIN;HE DEHONG;DING RUIJUN;DONG SHENGGIANG;XIE JIAHUI;CHEN CHENG;CHEN KANGMIN;CHEN GUPING;XU SHIMEI Department of Electronic Science and Technology Shanghai No. 5 Component Factory |
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| Abstract: | The microelectronic test patterns used for the process diagnosis and thereliability monitoring of silicon-gate CMOS IC are described; Discussions arefocused on: (1)the composite structures for measuring the sheet resistance of drain,source and poly-silicon, and the lateral variation produced during diffusion andetching; (2) the design of structures for monitoring the dynamic parameters ofCMOS IC and its application process evaluation. |
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| Keywords: | CMOS IC test pattern composite structures silicon-gate |
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