| An／C_（60）－Polymer／P－Si结构C－V特性 |
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| 引用本文： | 管玉国,戴国瑞.An／C_（60）－Polymer／P－Si结构C－V特性[J].吉林大学学报(理学版),1996(3). |
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| 作者姓名： | 管玉国 戴国瑞 |
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| 作者单位： | 吉林大学电子工程系，克山师范专科学校 |
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| 基金项目： | 国家自然科学基金，中国科学院长春物理研究所激发态物理开放实验室资助 |
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| 摘 要： | 报道了利用ＰＥＣＶＤ技术在Ｐ－Ｓｉ衬底抛光面上淀积含Ｃ６０聚合物薄膜及在薄膜表面蒸金形成Ａｎ／Ｃ６０－Ｐｏｌｙｍｅｒ／Ｐ－Ｓｉ结构．通过常温及温偏处理后的不同Ｃ－Ｖ特性，推算了聚合物薄膜中的几种电荷密度和介电常数，并对经过温偏处理后Ｃ－Ｖ曲线的畸变做了讨论．
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| 关 键 词： | 含C_（60）聚合物薄膜，Au／C_（60）－Polymer／P－Si结构，C－V特性 |
C-V Characteristic of the An/C_60-Polymer/P-Si Structure |
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| Guan Yuguo, Dai Guorui.C-V Characteristic of the An/C_60-Polymer/P-Si Structure[J].Journal of Jilin University: Sci Ed,1996(3). |
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| Authors: | Guan Yuguo Dai Guorui |
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| Abstract: | The polymeric thin films containing fullerene C60 onto p-type silicon were fabricated using plasma enhanced chemical vapor deposition technique. The An/C60-Polymer/P-Si structures were formed by evaporating gold onto the surface of the polymer films. The polymer films worked as the gate insulator. After biased temperature treatment. a variety of C-V characteristics were obtained.Several sorts of charge densities and dielectric constant for the polymeric thin film containing C60 were established, the abnormal curve of the C-V characteristic was discussed during biased temperature treatment. |
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| Keywords: | polymeric thin films containing C60 An/C60-Polymer/P-Si structure C-V characteristic |
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