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测定金属-半导体接触电阻的一种方法
引用本文:武蕴忠,孙承龙.测定金属-半导体接触电阻的一种方法[J].应用科学学报,1985,3(2):155-160.
作者姓名:武蕴忠  孙承龙
作者单位:中国科学院上海冶金研究所
摘    要:根据环形电极点辐射传输线模型,导出金属-半导体接触电阻对扩展电阻、探针与金属薄膜之间的接触电阻、电压和电流的定量关系.设计出一个用四探针方法测定金属-半导体接触电阻的新方案.精确测定了金属-半导体的接触电阻.讨论了金属-半导体接触电阻测量值的误差来源.

收稿时间:1982-09-01
修稿时间:1983-01-21

A MEASUREMENT METHOD OF METAL-SEMICONDUCTOR CONTACT RESISTANCE
WU YUNZHONG,SUN CHENGLONG.A MEASUREMENT METHOD OF METAL-SEMICONDUCTOR CONTACT RESISTANCE[J].Journal of Applied Sciences,1985,3(2):155-160.
Authors:WU YUNZHONG  SUN CHENGLONG
Institution:Shanghai Institute of Metallurgy, Academia Sinica
Abstract:The influence of spreading resistance and probe-metal film contact resistance on the contact resistance of metal-semiconductor is generally neglected in the conventional methods used for measuring metal-semiconductor contact risistance. Thus errors would be caused when one uses these methods to measure the metal-semi conductor contact resistance.In this paper, according to the radial transmission line mode of circular ring electrode, an equation bearing the quantitative relationship between metal-semiconductor contact resistance and spreading resistance of thin film, probe-thin metal film contact resistance, current and voltage is derived. Based upon the equation, a new mode for measurement of metal-semiconductor contact resistance using four-point probe method is proposed. The metal-semiconductor contact resistance is accurately measured and the error sources from this measurement are discussed.
Keywords:
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