| a—Si／c—Si异质结太阳能电池制造中的技术分析 |
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| 引用本文： | 林鸿生,陈备.a—Si／c—Si异质结太阳能电池制造中的技术分析[J].中国科学技术大学学报,1997,27(2):132-136. |
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| 作者姓名： | 林鸿生 陈备 |
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| 作者单位： | 中国科学技术大学物理系 |
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| 摘 要： | 应用数值模拟方法计算ｐ（ａ－Ｓｉ：Ｈ）／ｎ（ｃ－Ｓｉ）异质结和ｐ（ａ－Ｓｉ：Ｈ）／ｉ（ａ－Ｓｉ：Ｈ）／ｎ（ｃ－Ｓｉ）结－异质结太阳能电池的电场强度分布，指出异质结电池制造中对ａ－Ｓｉ：Ｈ膜厚的选择，进而对嵌入本征ｉ（ａ－Ｓｉ：Ｈ）层的结－异质结太阳能电池设计进行分析并讨论其稳定性
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| 关 键 词： | 异质结太阳能电池，a－Si：H隙态密度分布，载流子收集长度 |
Analyses of Technologies in Manufacture of a Si/c Si Heterojunction Solar Cells |
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| Lin Hongsheng,Chen Bei.Analyses of Technologies in Manufacture of a Si/c Si Heterojunction Solar Cells[J].Journal of University of Science and Technology of China,1997,27(2):132-136. |
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| Authors: | Lin Hongsheng Chen Bei |
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| Abstract: | By means of a computer simulation method,the electric field distribution in p(a Si:H)/n(c Si) heterojunction and p(a Si:H)/i(a Si:H)/n(c Si) junction heterojunction solar cells is presented.From these results,the optimum thickness of a Si:H films in the manufacture of a Si/c Si heterojuction solar cells is demonstrated and the design of a Si/c Si heterojunction solar cells inserted with the intrinsic a Si:H layer is analysed. Also,the stability of a Si/c Si heterojunction solar cells is discussed. |
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| Keywords: | heterojunction solar cell distribution of the gap states in a Si:H carrier collection length |
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