| γ辐照对GaP发光二极管深能级和亮度的影响 |
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| 引用本文： | 崔连森.γ辐照对GaP发光二极管深能级和亮度的影响[J].潍坊学院学报,2004,4(2):16-18. |
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| 作者姓名： | 崔连森 |
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| 作者单位： | 潍坊学院,信息与控制工程系,山东,潍坊,261061 |
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| 摘 要： | 首次应用深能级瞬态谱(DLTS)技术，研究了γ射线辐照Gap红色发光二级管深能和亮度的影响。结果表明，γ射线辐照射后，Gap红色发光二级管中的Zn-O对的浓度增大，亮度也提高。
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| 关 键 词： | γ射线 辐照 磷化镓 发光二极管 亮度 DLTS 深能级瞬态谱 |
| 文章编号： | 1671-4288(2004)02-0016-03 |
| 修稿时间： | 2004年2月20日 |
Influence of γ-ray Irradiation on Deep Level and Brightness of Gap LEDs |
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| GUI Lian-sen.Influence of γ-ray Irradiation on Deep Level and Brightness of Gap LEDs[J].Journal of Weifang University,2004,4(2):16-18. |
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| Authors: | GUI Lian-sen |
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| Abstract: | In this work the measurements of deep level inGaP light emitting diodes (LEDs)by deep level transient spectroscopy(DLTS) technique are reported. The study is mainly about the influence of T-ray irradiation on deep level and brightness ofthe diodes. The result indicates that the Zn-o concentration and luminance ofthe GaP LED increased after T-ray radiated. |
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| Keywords: | on-off EOQ model Brownian motion Optimal policy Average expected profits |
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