| Te溶液生长半磁半导体Cd1-xMnxTe的光学和电学性质研究 |
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| 引用本文： | 莫要武,吴汶海.Te溶液生长半磁半导体Cd1-xMnxTe的光学和电学性质研究[J].应用科学学报,1997,15(1):107-111. |
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| 作者姓名： | 莫要武 吴汶海 |
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| 作者单位： | 上海大学, 嘉定校区 |
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| 摘 要： | 测量了Te溶液生长半磁半导体(SMSC) Cd1-xMnxTe的导电类型、电阻率、霍尔迁移率和光致发光(PL).测定结果表明,Te溶液生长Cd1-xMnxTe晶体质量和稳定性均优于布里奇曼长晶,根据正四面体配位晶场中Mn2+3d (4T1)能级出现在Cd1-xMnxTe禁带中的观点,分析了在0.85~1.5μm范围内红外透射光谱上存在吸收边的原因。
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| 关 键 词： | 碲锰镉 光致发光 半磁半导体 溶液生长 |
| 收稿时间： | 1995-02-18 |
| 修稿时间： | 1995-05-18 |
INVESTIGATION OF THE PROPERTIES OF SMSCCd1-xMnxTe CRYSTAL FILMS GROWNRFOM Te-RICH SOLUTION |
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| Mo YAOWU WU,WENHAI.INVESTIGATION OF THE PROPERTIES OF SMSCCd1-xMnxTe CRYSTAL FILMS GROWNRFOM Te-RICH SOLUTION[J].Journal of Applied Sciences,1997,15(1):107-111. |
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| Authors: | Mo YAOWU WU WENHAI |
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| Institution: | Jiading Campus, Shanghai University, Jiading, Shanghai, 201800 |
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| Abstract: | The receptivity, conductive type, Hall mobility and photoluminescence (PL) of semimagnetic semiconductor (SMSC) Cd1-xMnxTe crystal films grown from Te-ricb solution were measured. All these results showed that the quality and stability of crystal films grown were better than Cd1-xMnxTe bulk crystal grown by Bridgeman technique. The cause of absorptive edge existing within 0.85~1.5 μm range in infrared transmittance spectrum was investigated based on the viewpoint that the first excited state (4T1) of Mn2+3d in tetrahedral crystal field appeared in the bandgap of Cd1-xMnxTe crystal. |
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| Keywords: | Solution growth Semimagnetic semiconductor CdMnTe Pbotolu minescence |
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