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一维热传导型半导体器件的有限体积元逼近及分析
引用本文:陆代刚,陈传军.一维热传导型半导体器件的有限体积元逼近及分析[J].烟台大学学报(自然科学与工程版),2008,21(4):247-255.
作者姓名:陆代刚  陈传军
作者单位:烟台大学数学与信息科学学院,山东,烟台,264005
摘    要:采用有限体积元方法来解决一维热传导型半导体器件数值模型,将分段线性函数和分段常数函数分别作为有限体积元方法的试探函数和检验函数,构造了半导体器件模型的全离散有限体积元逼近格式和计算程序.并进行理论分析,得到了最优阶H^1-模误差估计.

关 键 词:半导体器件  有限体积元方法  误差估计

Finite Volume Element Approximation and Analysis for One-Dimensional Semiconductor Device Simulation
LU Dai-gang,CHEN Chuan-jun.Finite Volume Element Approximation and Analysis for One-Dimensional Semiconductor Device Simulation[J].Journal of Yantai University(Natural Science and Engineering edirion),2008,21(4):247-255.
Authors:LU Dai-gang  CHEN Chuan-jun
Institution:(School of Mathematics and Informational Science, Yantai University,Yantai 264005, China)
Abstract:A finite volume element approximation is derived and studied for one-dimensional semiconductor device simulation. The main purpose is to develop a general framework for finite volume element approximation of the semiconductor problems and to study the error analysis. The finite volume element method is considered under a piecewise linear trial function space and a piecewise constant test function space. An optimal error estimate in the H^1-norm is giren.
Keywords:semiconductor device  finite volume element method  error estimate
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