| 应变层超晶格（ZnSe）n／（ZnS）m的亚带结构 |
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| 引用本文： | 汪静,黄和鸾.应变层超晶格（ZnSe）n／（ZnS）m的亚带结构[J].辽宁大学学报(自然科学版),1994,21(3):50-55. |
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| 作者姓名： | 汪静 黄和鸾 |
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| 作者单位： | 锦州师范学院物量系 |
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| 摘 要： | 本文讨论了应变对越晶格（ＺｎＳｅ）＿ｎ／（ＺｎＳ）＿ｍ在Ｔ点带边结构的影响，计算了带偏移：并在双量子阱近似下，用有效质量近似方法计算了应变层超晶格（ＺｎＳｅ）＿ｎ／（ＺｎＳ）＿ｍ的亚带结构。
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| 关 键 词： | 应变层超晶格 亚带结构 半导体材料 |
Subband Structures of(ZnSe)_n/(ZnS)_m Strained-Layer Superlattices |
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| Wang Jing Huang Heluan.Subband Structures of(ZnSe)_n/(ZnS)_m Strained-Layer Superlattices[J].Journal of Liaoning University(Natural Sciences Edition),1994,21(3):50-55. |
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| Authors: | Wang Jing Huang Heluan |
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| Institution: | Wang Jing Huang Heluan Department of Electronic Science and Engineering,Liaoning University |
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| Abstract: | The effect of strain on the hand-edges at T point is studied and the band-offset is calculated for(ZnSe)_n/(ZnS)_m strained-layer superlattices in this paper. The subband structures of(ZnSe)_n/(ZnS)_m stralned-layer superlattices are calculated by an effective-mass approximation in symmetric double quantum wells. |
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| Keywords: | Strained-layer superlattice Band offset Subband structure |
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