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| 用Marker技术和沟道方向的RBS研究等离子体阳极化膜 | |
| 引用本文： | 本琼. 用Marker技术和沟道方向的RBS研究等离子体阳极化膜[J]. 华东师范大学学报(自然科学版), 1986, 0(2) |
| 作者姓名： | 本琼 |
| 作者单位： | 华东师范大学电子科学技术系 |
| 摘 要： | 等离子阳极化是一种低温半导体材料氧化技术。本文用Marker技术证实了这种膜的氧化机制,并用RBS测量研究了过渡层厚度和膜的成分。并介绍了实验方法与结果。 |
| 关 键 词： | 标志技术 沟道方向的RBS 等离子体阳极化 氧化硅 过渡层 |
The Researches of Films of Plasma Anodization with Marker Technique and RBS in Channel Direction |
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| LI QIONG. The Researches of Films of Plasma Anodization with Marker Technique and RBS in Channel Direction[J]. Journal of East China Normal University(Natural Science), 1986, 0(2) | |
| Authors: | LI QIONG |
| Affiliation: | Departmrnt of Electronic Science Technique |
| Abstract: | Plasma anodization is a technique for the oxidation of semiconductor materials in low temperature.Marker technique is used to identify the mechanism of oxidation.RBS measurements are used to study the thickness of transition layer and composition of the oxide.Experimental method and results are also presented. |
| Keywords: | Marker technique EBS in channel direction plasma anodization silicon oxide transition layer |
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