Controlling charges distribution at the surface of a single GaN nanowire by
in-situ strain |
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Authors: | Xiao Chen Yanguo Wang Jikang Jian Lin Gu and Zhihua Zhang |
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Institution: | Liaoning Key Materials Laboratory for Railway, Dalian Jiaotong University, Dalian 116028, China,Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China,School of physics science and technology, Xinjiang University, Urumqi 830046, China,Collaborative Innovation Center of Quantum Matter, Beijing 100190, China and Liaoning Key Materials Laboratory for Railway, Dalian Jiaotong University, Dalian 116028, China |
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Abstract: | Effect of the strain on the charge distribution at the surface of a GaN semiconductor nanowire (NW) has been
investigated inside transmission electron microscope (TEM) by in-situ off-axis electron holography. The outer
and inner surfaces of the NW bent axially under compression of two Au electrodes were differently strained,
resulting in difference of their Fermi levels. Consequently, the free electrons flow from the high Fermi level to
the low level until the two Fermi levels aligned in a line. The potential distributions induced by charge
redistribution in the two vacuum sides of the bent NW were examined respectively, and the opposite nature of
the bounded charges on the outer and inner surfaces of the bent NW was identified. The results provide
experimental evidence that the charge distribution at the surfaces of a single GaN NW can be controlled by
different strains created along the NW. |
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Keywords: | Nanowire
Strain
Charge distribution
Electron holography
TEM |
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