| 硅浅杂质能级的低温陷阱效应 |
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| 引用本文： | 郑茳,肖志雄.硅浅杂质能级的低温陷阱效应[J].应用科学学报,1996,14(1):73-77. |
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| 作者姓名： | 郑茳 肖志雄 |
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| 作者单位： | 东南大学 |
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| 基金项目： | 国家自然科学基金,“八五”重点资助 |
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| 摘 要： | 分析了硅浅杂质能级的低温陷阱效应，给出了ｐ型硅中不同注入水平下导带中注入电子与总电子数目之比ｎｏ／ｎＴ的表达，主要结果表明在低注入条件下，浅杂质能级陷阱效应对于低温下双极器件的频率特性有着巨大影响，而在高注入水平下，由于总的注入电子数目大大超过被陷电子数目，从而克服了这一低温陷阱效应，可以忽略。
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| 关 键 词： | 硅 浅杂质能级 低温 陷阱效应 半导体 |
TRAPPING CHARACTERISTICS OF THE SHALLOW IMPURITY ENERGY LEVEL IN SILICON AT LOW TEMPERATURES |
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| ZHENG JIANG, XIAO ZHIXIONG,WU JIN, WEI TONGLI.TRAPPING CHARACTERISTICS OF THE SHALLOW IMPURITY ENERGY LEVEL IN SILICON AT LOW TEMPERATURES[J].Journal of Applied Sciences,1996,14(1):73-77. |
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| Authors: | ZHENG JIANG XIAO ZHIXIONG WU JIN WEI TONGLI |
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| Institution: | Southeast University |
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| Abstract: | In this Paper,the.trapping effect of the shallow impurity energylevel in silicon at low temperatures is analyzed. The expression for the ratios of theinjeded electrons in the eonduction band to the total plectTons n./ny at f xvariousinfortion levels in p--type silicon is given. The main. results indicate thatthe trapping effect of the shallow impurity energy level under the low injectioncondition will exert a tremendotie'influence on the frequency Ptbperlies of bipolardevices at low temperatures, and it becomes "eligible at the high injection levelbecause the boaal injected electrons overwhelm the carrier trapping effeet. |
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| Keywords: | Silicon Shallow Impurity Energy Level Low Temperature Trapping |
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