| NiO_x阻变存储器性能增强方法及相关机理研究 |
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| 引用本文： | 顾晶晶,陈琳,徐岩,孙清清,丁士进,张卫.NiO_x阻变存储器性能增强方法及相关机理研究[J].复旦学报(自然科学版),2010(6). |
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| 作者姓名： | 顾晶晶 陈琳 徐岩 孙清清 丁士进 张卫 |
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| 作者单位： | 复旦大学专用集成电路与系统国家重点实验室; |
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| 基金项目： | 国家自然科学基金(60776017)资助项目 |
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| 摘 要： | 通过精确控制在Pt衬底上制备NiOx薄膜的工艺过程,制备出阻值窗口增大5倍以上,高低阻态稳定的TiN/NiOx/Pt结构阻变存储器.研究发现,NiOx薄膜的多晶态结晶结构和化学组分,尤其是Ni元素的化学态,是影响NiOx阻变存储器阻值窗口和稳定性的主要因素.X射线光电子能谱和X射线多晶体衍射测试结果表明,当NiOx薄膜中间隙氧或Ni2+空位增多时,Ni2+会被氧化成为Ni3+以保持电中性,Ni3+离子在材料中引入空穴导致P型氧化物NiO的漏电流增大.基于此机理,提出通过提高淀积温度、降低氧气分压的方法抑制NiOx薄膜中间隙氧或Ni2+空位的产生,降低TiN/NiOx/Pt结构阻变存储器关态漏电流,增大阻值窗口.这种基于工艺的性能增强方法,在NiOx阻变存储器实际应用中有良好前景.
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| 关 键 词： | 阻变存储器 氧化镍 阻值窗口 稳定性 工艺控制 |
Performance Enhancement Implementation and Related Mechanism Study of NiOx-based Resistive Random Access Memory |
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| GU Jing-jing,CHEN Lin,XU Yan,SUN Qing-qing,DING Shi-jin,ZHANG Wei.Performance Enhancement Implementation and Related Mechanism Study of NiOx-based Resistive Random Access Memory[J].Journal of Fudan University(Natural Science),2010(6). |
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| Authors: | GU Jing-jing CHEN Lin XU Yan SUN Qing-qing DING Shi-jin ZHANG Wei |
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| Institution: | GU Jing-jing,CHEN Lin,XU Yan,SUN Qing-qing,DING Shi-jin,ZHANG Wei(State Key Laboratory of ASIC and System,Fudan University,Shanghai 200433,China) |
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| Abstract: | Accurate process control of DC sputtering for NiOx thin film preparation results in TiN/NiOx/Pt resistive random access memory(RRAM) with better resistance stability and more than 5 times higher resistance ratio.It is found that,the polycrystalline nature and the chemical constituents,especially the chemical valence of Ni,are key factors to determine the resistance ratio and stability of NiOx RRAM.X-ray diffraction and X-ray photoelectron spectroscopy investigations indicate that,more interstitial oxygen at... |
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| Keywords: | resistive random access memory NiO resistance ratio stability process control |
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