|
|||||
|
|
| 栅压对有机薄膜场效应晶体管中载流子注入的影响 | |
| 引用本文： | 胡加兴,郭荣礼,刘宝元. 栅压对有机薄膜场效应晶体管中载流子注入的影响[J]. 中国西部科技, 2009, 8(19): 44-45,49 |
| 作者姓名： | 胡加兴 郭荣礼 刘宝元 |
| 作者单位： | 西安工业大学光电学院,陕西,西安,710032 |
| 摘 要： | 采用有机半导体材料酞菁铜作为有源层，聚四氟乙烯作为绝缘层，制作了两个不同结构的有机薄膜场效应晶体管，一个是底电极结构，另一个是倒置顶电极结构。文章通过对两个器件的电特性进行对比，分析出在倒置顶电极结构下栅压对有机薄膜场效应晶体管中载流子的注入有很大的帮助。 |
| 关 键 词： | 栅压 有机场效应晶体管 载流子 |
The Grid Voltage Effect in Carrier Injection of Organic Field-effect Transistor |
|
| HU Jia-xing,GUO Rong-li,LIU Bao-yuan. The Grid Voltage Effect in Carrier Injection of Organic Field-effect Transistor[J]. Science and Technology of West China, 2009, 8(19): 44-45,49 | |
| Authors: | HU Jia-xing GUO Rong-li LIU Bao-yuan |
| Affiliation: | (Xi＇ an Technological University,Xian Shanxi 710032) |
| Abstract: | Two organic field-effect transistor with different structure were fabricated.One had the bottom structure and the other had the inverted top structure.We measured the electronic parameters of them and found the electronic parameters of the device with inverted top structure are better than the other one.The measurement shows the grid voltage can enhance the injection of carriers in the OTFT with inverted top structure. |
| Keywords: | Grid voltage Organic field-effect transistor Carrier |
| 本文献已被 维普 万方数据 等数据库收录！ | |