硼离子注入对硅基Si3N4薄膜驻极体性质的影响及力学性能的改善

利用硼离子B⁺注入方法来改善Si₃N₄薄膜的力学性质,并就B⁺注入对Si₃N₄薄膜驻极体性质的影响进行了较为系统的研究.实验结果表明,B⁺注入能够有效地降低薄膜的内应力,而对薄膜的驻极体性质有不利的影响;用化学表面修正能够在一定程度上提高材料的抗恶劣环境能力。

Influence of Boron Ion Implantation on the Electret Properties and Mechanic Properties of Si3N4 Film Based on Silicon Substrate

Amorphous silicon nitride (Si3N4) film has outstanding electret properties and it is compatible with the micromachining technology, so it can be used in miniature microphone. But big tensile stress of Si3N4 film limits its application. In this paper, the improvement of mechanical property of Si3N4 film by boron ion implantation and its influence on the electret properties of the film is discussed. The results show that the boron ion plantation reduces the tensile stress of film effectively,but it also decreases the electret properties of the film. The capability of Si3N4 electret film against environmental conditions can be increased by chemistrical surface modification. Therefore, Si3N4 film may be used as a vibrating film. After the stability of charge storage is improved,it may be used as electret material for miniature microphones.