| MOS结构界面性质的变频C—V研究 |
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| 引用本文： | 王永生. MOS结构界面性质的变频C—V研究[J]. 南京大学学报(自然科学版), 1990, 26(2): 211-222 |
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| 作者姓名： | 王永生 |
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| 作者单位： | 南京大学物理系，南京大学物理系，南京大学物理系 |
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| 摘 要： |
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| 关 键 词： | MOS 结构 界面 测量 C－V法 变频 |
THE VARIABLE-FREQUENCY C-V METHOD FOR MEASURING INTERFACE CHARACTERISTICS OF MOS STRUCTURE |
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| Wang Yongsheng Zheng Youdou Zhang Rong. THE VARIABLE-FREQUENCY C-V METHOD FOR MEASURING INTERFACE CHARACTERISTICS OF MOS STRUCTURE[J]. Journal of Nanjing University: Nat Sci Ed, 1990, 26(2): 211-222 |
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| Authors: | Wang Yongsheng Zheng Youdou Zhang Rong |
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| Affiliation: | Department of Physics |
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| Abstract: | A method for measuring interface characteristics of MOS structure is described. The interface state density, time constant, and capture cross-section with their energy distribution can be obtained. This method can also be used to study interface deep levels and oxide trap centers. |
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| Keywords: | MOS structure variable-frequency C-V interface states deep level oxide trap centers |
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