| GaAs/Al_xGa_(1-x)As和In_(1-x)Ga_xAs/GaSb_(1-y)As_y量子阱中激子的结合能 |
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| 引用本文： | 刘文明,于彤军. GaAs/Al_xGa_(1-x)As和In_(1-x)Ga_xAs/GaSb_(1-y)As_y量子阱中激子的结合能[J]. 吉林大学学报(理学版), 1989, 0(1) |
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| 作者姓名： | 刘文明 于彤军 |
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| 作者单位： | 吉林大学电子科学系(刘文明)，吉林大学电子科学系(于彤军) |
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| 摘 要： | 计算了GaAs/Al_xGa_(1-x)As和In_(1-x)Ga_xAs/GaSb_(1-y)As_y量子阱中激子的结合能,得到了结合能随阱宽和阱深的变化。结果表明,在这两类量子阱结构中激子结合能的变化规律有本质的不同。
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| 关 键 词： | 超晶格 量子阱 激子 结合能 |
Binding Energies of Excitons in GaAs/Al_xGa_(1-x)As and In_(1-x)Ga_xAs/GaSb_(1-y)As_y Quantum Wells |
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| Liu wenming and Yu Tongjun. Binding Energies of Excitons in GaAs/Al_xGa_(1-x)As and In_(1-x)Ga_xAs/GaSb_(1-y)As_y Quantum Wells[J]. Journal of Jilin University: Sci Ed, 1989, 0(1) |
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| Authors: | Liu wenming and Yu Tongjun |
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| Abstract: | We calculated the binding energies of excitons in GaAs/A1_xGa_(1-x)As and In_(1-x)Ga_xAs/GaSb_(1-y)As_y quantum wells using a varitional method. The variations of binding energies with the well width and well depth was obtained. They present qualitative differences for these two kinds of quantum well structures. |
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| Keywords: | superlattlce quantum well exciton binding energy. |
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