| 飞秒激光作用下单晶硅的吸收系数和烧蚀阈值 |
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| 引用本文： | 彭爱莲,彭玉峰,张永涛,李阔湖,陈靖.飞秒激光作用下单晶硅的吸收系数和烧蚀阈值[J].河南师范大学学报(自然科学版),2006,34(2):42-45. |
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| 作者姓名： | 彭爱莲 彭玉峰 张永涛 李阔湖 陈靖 |
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| 作者单位： | 河南师范大学,物理与信息工程学院,河南,新乡,453007 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 理论计算飞秒脉冲激光作用下,单晶硅的吸收系数和烧蚀阈值.当激光强度范围在1013~1014W/cm2之间时,详细分析了2个光子的吸收在等离子体形成过程中产生的重要作用,发现当等离子体数密度超过传统意义上的临界密度时,须采用薄膜光学的几何矩阵方法来计算单晶硅表面的吸收系数.在此基础上,依照材料的静电烧蚀机制计算单晶硅的烧蚀阈值,结果和实验数据符合的较好.
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| 关 键 词： | 飞秒激光 双光子吸收 吸收系数 烧蚀阈值 |
| 文章编号： | 1000-2367(2006)02-0042-04 |
| 收稿时间： | 2005-05-16 |
| 修稿时间： | 2005-12-10 |
Absorption Coefficient and Damage Threshold in Single-crystalline Silicon with Femtosecond Laser |
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| PENG Ai-lian,PENG Yu-feng,ZHANG Yong-tao,LI Kuo-hu,CHEN Jing.Absorption Coefficient and Damage Threshold in Single-crystalline Silicon with Femtosecond Laser[J].Journal of Henan Normal University(Natural Science),2006,34(2):42-45. |
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| Authors: | PENG Ai-lian PENG Yu-feng ZHANG Yong-tao LI Kuo-hu CHEN Jing |
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| Abstract: | Absorption coefficient and damage thresholds in single-crystalline silicon are investigated theoretically when laser intensity is in the range 10~(13)~10~(14) W/cm~2.We examine the consequences of two-photon absorption in the carrier generation and found the absorption coefficient must be calculated based on matrix algorithm of the thin-film optics when carrier density is in excess of the conventional critical density.What is more,damage thresholds for silicon are determined based on calculations for the electrostatic regime of ablation,Calculations results are closer to the experimented data. |
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| Keywords: | femtosecond laser two-photon absorption absorption coefficient damage threshold |
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