All-inorganic quantum-dot light-emitting-diodes with vertical nickel oxide nanosheets as hole transport layer |
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| Authors: | Jiahui Li Yuanlong Shao Xuecheng Chen Hongzhi Wang Yaogang Li Qinghong Zhang |
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| Affiliation: | State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China;State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China;State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China;State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China;Engineering Research Centre of Advanced Glasses Manufacturing Technology, Ministry of Education, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China;Engineering Research Centre of Advanced Glasses Manufacturing Technology, Ministry of Education, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China |
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| Abstract: | ![]()
All-inorganic quantum dot light emitting diodes (QLEDs) have gained great attention as a result of their high stability under oxygen-rich, humid and high current working conditions. In this work, we have fabricated an all-inorganic QLED device (FTO/NiO/QDs/AZO/Ag) with sandwich-structure, wherein the inorganic metal oxides thin films of NiO and AZO were employed as hole and electron transport layers, respectively. The porous NiO layer with vertical lamellar nanosheets interconnected microstructure have been directly synthesized on the substrate of conductive FTO glass and increased the wettability of CdSe@ZnS QDs, which result in an enhancement of current transport performance of the QLED. |
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| Keywords: | Inorganic material NiO nanosheets QLED |
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