| 用四极型SIMS对砷化镓中硅定量分析的研究 |
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| 引用本文： | 姜志雄,查良镇,陈新,陈春华,王佑祥.用四极型SIMS对砷化镓中硅定量分析的研究[J].清华大学学报(自然科学版),1994(4). |
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| 作者姓名： | 姜志雄 查良镇 陈新 陈春华 王佑祥 |
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| 作者单位： | 清华大学电子工程系，中国科学院表面物理实验室 |
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| 摘 要： | ＧａＡｓ中Ｓｉ的定量分析是典型的ＳＩＭＳ分析课题，有明确的应用背景。文中对影响ＳＩＭＳ定量分析的一些基本因素进行了实验研究，用Ｏ２＋源和Ｃｓ＋源对均匀掺硅和离子注入硅的ＧａＡｓ样品进行了定量分析，考察了实验的稳定性。
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| 关 键 词： | 二次离子质谱 定量分析 |
Quantitative analysis of silicon in GaAs by quadrupole-based SIMS |
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| Jiang Zhixiong, Cha Liangzhen.Quantitative analysis of silicon in GaAs by quadrupole-based SIMS[J].Journal of Tsinghua University(Science and Technology),1994(4). |
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| Authors: | Jiang Zhixiong Cha Liangzhen |
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| Abstract: | Quantitative analysis of St in GaAs is a typical subject of SIMS analysis whichhas strong application background. The dependence of quantitative SIMS anslysis on themost important fundamental factors has been studied experimentally. Quantitative analysishas been realized for a series of St doped as well as implanted GaAs samples by using O;and Cs+ primary ions. Stability has also been studied during the experiment. |
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| Keywords: | SIMS quantification |
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