压强对PECVD制备碳纳米管的影响

采用等离子体增强化学气相沉积技术(PECVD),以C2H2、H2和N2为反应气体,在镀Ni催化剂的Si基底上成功制备出多壁碳纳米管薄膜.并通过扫描电镜拍摄其表征,系统、深入地研究了沉积压强对碳管形貌的影响.结果表明:沉积压强对催化剂的刻蚀和碳纳米管薄膜的形成起着重要作用,获得定向性良好、分布均匀、密度适中的碳纳米管的最佳沉积压强是300 Pa.

The Effect of Depositing Pressure on the Carbon Nanotubes Synthesized by Plasma Enhanced Chemical Vapor Deposition

Muti-walled carbon nanotubes grown on Si substrates with Ni as catalyst as welt as acetytene, nyarogen and nitrogen as gases are obtained by a technology of plasma enhanced chemical vapor deposition. Their morphology was characterized by scanning electron microscopy（SEM）. The effect of depositing pressure on the structure of carbon nanotubes were deeply analyzed. Experimental results show that the depositing pressure plays important role in etch of catalyst and morphology of carbon nanotubes and the optimum depositing pressure of muti-walled nantubes with vertical arrangement, uniform distribution and moderate density is 300 Pa.