| SiO_2/GaAs界面的AES深度分析 |
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| 引用本文： | 郑丽荣,邢益荣.SiO_2/GaAs界面的AES深度分析[J].汕头大学学报(自然科学版),1987(2). |
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| 作者姓名： | 郑丽荣 邢益荣 |
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| 作者单位： | 汕头大学物理学系，中国科学院半导体研究所 |
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| 摘 要： | 利用 AES 和离子溅射剥离技术,对 SiO_2/GaAs 界面进行了深度分布测量.SiO_2膜是采用 CVD 方法在400℃下淀积在 GaAs 衬底上的.结果表明,在界面区中存在 Ga的氧化物(可能是 Ga_2O_3)和自由元素 As,即这种界面实际上是 SiO_2/Ga 的氧化物十元素As/GaAs 系统.
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| 关 键 词： | 俄歇深度分析 二氧化硅/砷化镓界面 百分比浓度 镓氧化物 元素砷 |
Analysis of AES Depth Profiles of SiO_2/GaAs Interface |
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| Zheng Lirong.Analysis of AES Depth Profiles of SiO_2/GaAs Interface[J].Journal of Shantou University(Natural Science Edition),1987(2). |
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| Authors: | Zheng Lirong |
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| Abstract: | The SiO_2/GaAs interface was measured for its depth profile by use of AES combined with ion-sputtering and stripping technique.The SiO_2 film had been deposited on GaAs substrates at 400℃ by CVD technique. It was shown that there exists some kind of gallium oxide (probably Ga_2O_3) and elemental arsenic in the transitional region of the interface. Therefore,such an interface is actually a system of SiO_2/Ga oxide+the element As/GaAs. |
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| Keywords: | AES depth profile SiO_2/GaAs interface Percentage concentration Gallium oxides Elemental arsenic |
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