| 磷砷化镓中氮和氧引起的深能级 |
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| 引用本文： | 周继程,乔墉,孙义林,沈德新,徐晨梅.磷砷化镓中氮和氧引起的深能级[J].应用科学学报,1983,1(4):345-352. |
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| 作者姓名： | 周继程 乔墉 孙义林 沈德新 徐晨梅 |
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| 作者单位： | 中国科学院上海冶金研究所 |
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| 摘 要： | 用离子注入技术对磷砷化镓进行了掺氮,给出了组分在0.175 ≤ x ≤ <0.8间氮能级随组分变化的方程式.
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| 收稿时间： | 1982-04-27 |
NITROGEN AND OXYGEN INDUCED DEEP LEVELS IN GaAs1-xPx |
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| ZHOU JICHRNG,QIAO YONG,SUN YILIK,SHEN DEXIK,XU GHENMEI.NITROGEN AND OXYGEN INDUCED DEEP LEVELS IN GaAs1-xPx[J].Journal of Applied Sciences,1983,1(4):345-352. |
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| Authors: | ZHOU JICHRNG QIAO YONG SUN YILIK SHEN DEXIK XU GHENMEI |
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| Institution: | Shanghai Institute of Metallurgy, Academia, Sinica 865 Chang Xing Road, Shanghai 200050, China |
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| Abstract: | The ion-implantation technique was used for introducing nitrogen into GaAs1-xPx with or without oxygen. The dependence of nitrogen energy levels of close-spaced epitaxially grown GaAs1-xPx (with oxygon) on composition can be represented by an "abnormal" curve as compared with data reported in the literature. The relationship between composition X and nitrogen energy levels in VPE GaAs1-xPx (without oxygen) grown under phosphorous pressures can be expressed as. |
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